Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth

dc.contributor.advisorDr. Morgan Ware
dc.contributor.authorALAA AHMAD KAWAGY
dc.date2019
dc.date.accessioned2022-06-02T00:34:14Z
dc.date.available2022-06-02T00:34:14Z
dc.degree.departmentMICROELECTRONIC-PHOTONICS
dc.identifier.other37951
dc.identifier.urihttps://drepo.sdl.edu.sa/handle/20.500.14154/60794
dc.publisherSaudi Digital Library
dc.titleCharacterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth
dc.typeThesis
sdl.thesis.levelMaster
sdl.thesis.sourceSACM - United States of America

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