MAGNETO-OPTICAL STUDIES OF CdSe BASED NPLS
Date
2024
Authors
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Journal ISSN
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Publisher
University at Buffalo
Abstract
Solution processed 2D CdSe nanoplatelets (NPLs) exhibit interesting optical properties.
The NPLs form in two types of hetrostructures, known as, ”core/ shell” or ”core/ crown” NPLs,
based on the growth direction. Here, we investigated the two configurations separately:
The formation of core/ shell structures enhances the carrier quantum confinement in these
NPLs. However, It also increases the total thickness, which may become a problem for certain
applications. Therefore, forming alloyed hetrostrucures offers a way to tune the band gap of the
NPLs without changing their dimensions. Here, we report CdSeS/ CdMnS alloy core /shell NPLs
with a thickness of 16 ML. The composition of the sulfur range between 0 < x < 1. We expect
that the addition of sulfur results in increased delocaliztion of electrons and holes compared to the
conventional CdSe/CdMnS core /shell NPLs. The new alloyed structures NPLs exhibit a red shift
of the PL emission energy proportional to the sulfur composition and a broadening of the exciton
absorption and photoluminescence (PL) features. These results are expected to be beneficial for
applications of the NPLs in LEDs.
We also investigated core/ crown heterostructure NPLs, with type I and type II band alignment.
Starting with CdSe/CdS core/crown NPLs (type I), the transmission spectrum shows the heavy
hole–electron and light hole–electron exciton transitions at 2.469 eV and 2.650 eV, respectively
occurring in the CdSe core. The CdS crown added for passivation and insure the stability
of the NPLs. The sample also maintain a narrow emission peak, (FHMW = 9 nm). Next,
CdSe/CdSeTe/CdSe/CdS core / multi crowns structures were studied, The photoluminescence
(PL) emission three times broader compared to the PL from core / crown sample . In type II
NPLs at 3K, we observe localization of the electrons and holes, this results in a weakening the
electron-hole Coulomb interaction. These carrier localization is reduced as the temperature is
increased to 20K. Light-emitting devices (LED) that incorporate NPLs were experimentally tested
at both room and low temperatures. Our results provide guidelines for further optimization of CdSe
hetroustucture-based NPLs for lighting and light-amplification applications.
Description
Keywords
Semiconductor NPLs