MODELING ION-TRACK STRUCTURE IN SILICON AND NUMERICAL SIMULATION OF PROTON- INDUCED UPSET IN {N (+) P} DIODES .
| dc.contributor.author | OSAMA IBRAHEEM FAGEEHA | |
| dc.date | 1995 | |
| dc.date.accessioned | 2022-06-01T03:07:14Z | |
| dc.date.available | 2022-06-01T03:07:14Z | |
| dc.degree.department | Ph.D. | |
| dc.identifier.other | 6290 | |
| dc.identifier.uri | https://drepo.sdl.edu.sa/handle/20.500.14154/55454 | |
| dc.language.iso | en_US | |
| dc.publisher | Saudi Digital Library | |
| dc.title | MODELING ION-TRACK STRUCTURE IN SILICON AND NUMERICAL SIMULATION OF PROTON- INDUCED UPSET IN {N (+) P} DIODES . | |
| dc.type | Thesis | |
| sdl.thesis.level | Doctoral | |
| sdl.thesis.source | SACM - United States of America |