Epitaxial Growth of Silicon on Poly-Crystalline Si Seed layer at Low Temperature by Using Hot Wire Chemical Vapor Deposition

dc.contributor.advisorDr. Hameed Naseem
dc.contributor.authorMANAL ABDULLAH ABDULAZIZ ALDAWSARI
dc.date2015
dc.date2016-04-03 13:04:09.490
dc.date.accessioned2022-06-01T10:55:24Z
dc.date.available2022-06-01T10:55:24Z
dc.degree.departmentDr. Hameed Naseem
dc.identifier.other27219
dc.identifier.urihttps://drepo.sdl.edu.sa/handle/20.500.14154/57400
dc.publisherSaudi Digital Library
dc.titleEpitaxial Growth of Silicon on Poly-Crystalline Si Seed layer at Low Temperature by Using Hot Wire Chemical Vapor Deposition
dc.typeThesis
sdl.thesis.levelMaster
sdl.thesis.sourceSACM - United States of America

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