Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET)

dc.contributor.advisor	Dr. Santosh K. Kurinec
dc.contributor.author	IDRIS HASEN MOHAMMED SMAILI
dc.date	2014
dc.date	2015-03-06 06:03:45.643
dc.date.accessioned	2022-06-01T10:32:36Z
dc.date.available	2022-06-01T10:32:36Z
dc.degree.department	Dr. Santosh K. Kurinec
dc.identifier.other	22248
dc.identifier.uri	https://drepo.sdl.edu.sa/handle/20.500.14154/57329
dc.publisher	Saudi Digital Library
dc.title	Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET)
dc.type	Thesis
sdl.thesis.level	Master
sdl.thesis.source	SACM - United States of America

Collections