Understanding the Performance of Quantum Dot Lasers

Abstract

The characteristics of four different InAs quantum dot (QD) laser structures (R2, R4, R8 and R16) with a cavity length of 1mm are evaluated to find out how well semiconductor QD lasers perform. The key characteristics that this project studies are threshold current, threshold current density, laser efficiency and emission wavelength as functions of temperature. The results show that threshold current and emission wavelength increase as the temperature increases. Additionally, the slope of efficiency, which is calculated from the straight line above the threshold current in the power–current (P–I) curve, decreases as the temperature increases.