Nanorectifiers for Harnessing THz Energy

Abstract

This study investigates the viability for Rectenna as a renewable energy resource. The diode is the project's primary emphasis because it is the most difficult component. As MIM diodes have a quick reaction time because of the femtosecond tunnelling mechanism that regulates current flow, they have been regarded as the best candidates for rectenna applications that target energy in the THz band. The three single structures (MIM diodes) explored in this study are Al/TiO2/Al, Al/ZnO/Al and Ti/Sc2O3/Au; while the two double structures (MIIM diodes) explored in this study are Cr/TiO2-ZnO/Cr and Nb/Sc2O3-ZnO/Nb. Rectification characteristics, in particular zero-bias dynamic resistance (R0) and zero-bias responsiveness (β0), were derived from the I-V plots since energy harvesting applications need for running without an external voltage source. After performing the I-V measurement using an Agilent B1500 semiconductor parameter analyzer with an integrated probe station, the I-V plot was produced. For single insulator devices, the voltage sweep was limited to -1.5 V to +1.5 V, but for double insulator devices, the voltage sweep was limited to -1 V to +1 V. Direct tunneling, Fowler-Nordheim tunneling, Schottky emission, direct tunneling and Poole Frenkel emission were some of the conduction processes explained; however, the Fowler Nordheim conduction mechanism was the one explored in examining the MIM diodes of this work. To examine step tunneling and resonant tunneling, the double insulator was considered. At about 0.4 V and 0.6 V, respectively, resonant tunneling was seen on Cr/TiO2-ZnO/Cr and Nb/Sc2O3- ZnO/Nb. The Ti/Sc2O3/Au device produced the most promising findings, with a β0 of 25.5 A/W and a R0 of 2.95 MΩ